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LM158-N, LM258-N, LM2904-N, LM358-N

SNOSBT3I JANUARY 2000 REVISED DECEMBER 2014
LMx58-N Low-Power, Dual-Operational Amplifiers

1 Features 3 Description
1 Available in 8-Bump DSBGA Chip-Sized Package, The LM158 series consists of two independent, high
(See AN-1112, SNVA009) gain, internally frequency compensated operational
amplifiers which were designed specifically to operate
Internally Frequency Compensated for Unity Gain from a single power supply over a wide range of
Large DC Voltage Gain: 100 dB voltages. Operation from split power supplies is also
Wide Bandwidth (Unity Gain): 1 MHz possible and the low power supply current drain is
(Temperature Compensated) independent of the magnitude of the power supply
voltage.
Wide Power Supply Range:
Single Supply: 3V to 32V Application areas include transducer amplifiers, dc
gain blocks and all the conventional op-amp circuits
Or Dual Supplies: 1.5V to 16V which now can be more easily implemented in single
Very Low Supply Current Drain (500 power supply systems. For example, the LM158
A)Essentially Independent of Supply Voltage series can be directly operated off of the standard
Low Input Offset Voltage: 2 mV 3.3-V power supply voltage which is used in digital
systems and will easily provide the required interface
Input Common-Mode Voltage Range Includes electronics without requiring the additional 15V
Ground power supplies.
Differential Input Voltage Range Equal to the
The LM358 and LM2904 are available in a chip sized
Power Supply Voltage package (8-Bump DSBGA) using TI's DSBGA
Large Output Voltage Swing package technology.
Unique Characteristics:
Device Information(1)
In the Linear Mode the Input Common-Mode
PART NUMBER PACKAGE BODY SIZE (NOM)
Voltage Range Includes Ground and the
Output Voltage Can Also Swing to Ground, TO-CAN (8) 9.08 mm x 9.09 mm
LM158-N
even though Operated from Only a Single CDIP (8) 10.16 mm x 6.502 mm
Power Supply Voltage. LM258-N TO-CAN (8) 9.08 mm x 9.09 mm
The Unity Gain Cross Frequency is DSBGA (8) 1.31 mm x 1.31 mm
Temperature Compensated. LM2904-N SOIC (8) 4.90 mm x 3.91 mm
The Input Bias Current is also Temperature PDIP (8) 9.81 mm x 6.35 mm
Compensated. TO-CAN (8) 9.08 mm x 9.09 mm
Advantages: DSBGA (8) 1.31 mm x 1.31 mm
LM358-N
Two Internally Compensated Op Amps SOIC (8) 4.90 mm x 3.91 mm
PDIP (8) 9.81 mm x 6.35 mm
Eliminates Need for Dual Supplies
Allows Direct Sensing Near GND and VOUT (1) For all available packages, see the orderable addendum at
the end of the datasheet.
Also Goes to GND
Compatible with All Forms of Logic Voltage Controlled Oscillator (VCO)
Power Drain Suitable for Battery Operation
2 Applications
Active Filters
General Signal Conditioning and Amplification
4- to 20-mA Current Loop Transmitters
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM158-N, LM258-N, LM2904-N, LM358-N
SNOSBT3I JANUARY 2000 REVISED DECEMBER 2014 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.3 Feature Description................................................. 12
2 Applications ........................................................... 1 7.4 Device Functional Modes........................................ 13
3 Description ............................................................. 1 8 Application and Implementation ........................ 14
4 Revision History..................................................... 2 8.1 Application Information............................................ 14
8.2 Typical Applications ................................................ 14
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4 9 Power Supply Recommendations...................... 24
6.1 Absolute Maximum Ratings ...................................... 4 10 Layout................................................................... 24
6.2 ESD Ratings ............................................................ 4 10.1 Layout Guidelines ................................................. 24
6.3 Recommended Operating Conditions....................... 5 10.2 Layout Example .................................................... 24
6.4 Thermal Information .................................................. 5 11 Device and Documentation Support ................. 25
6.5 Electrical Characteristics: LM158A, LM358A, LM158, 11.1 Related Links ........................................................ 25
LM258 ........................................................................ 5 11.2 Trademarks ........................................................... 25
6.6 Electrical Characteristics: LM358, LM2904............... 7 11.3 Electrostatic Discharge Caution ............................ 25
6.7 Typical Characteristics .............................................. 9 11.4 Glossary ................................................................ 25
7 Detailed Description ............................................ 12 12 Mechanical, Packaging, and Orderable
7.1 Overview ................................................................. 12 Information ........................................................... 25
7.2 Functional Block Diagram ....................................... 12
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (March 2013) to Revision I Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision G (March 2013) to Revision H Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 25
2 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated
Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

LM158-N, LM258-N, LM2904-N, LM358-N
www.ti.com SNOSBT3I JANUARY 2000 REVISED DECEMBER 2014
5 Pin Configuration and Functions
D, P, and NAB Package

8-Pin SOIC, PDIP, and CDIP
Top View
LMC Package
8-Pin TO-99
Top View
YPB Package
8-Pin DSBGA
Top View
Pin Functions
PIN
D/P/LMC TYPE DESCRIPTION
DSBGA NO. NAME
NO.
1 A1 OUTA O Output , Channel A
2 B1 -INA I Inverting Input, Channel A
3 C1 +INA I Non-Inverting Input, Channel A
Ground for Single supply configurations. negative supply for dual supply
4 C2 GND / V- P
configurations
5 C3 +INB I Output, Channel B
6 B3 -INB I Inverting Input, Channel B
7 A3 OUTB O Non-Inverting Input, Channel B
8 A2 V+ P Positive Supply
Copyright 20002014, Texas Instruments Incorporated Submit Documentation Feedback 3

LM158-N, LM258-N, LM2904-N, LM358-N
6 Specifications
6.1 Absolute Maximum Ratings
(1) (2) (3)
See .
LM158, LM258,
LM358, LM158A, LM2904
LM258A, LM358A UNIT
MIN MAX MIN MAX
Supply Voltage, V+ 32 26 V
Differential Input Voltage 32 26 V
Input Voltage 0.3 32 0.3 26 V
Power Dissipation (4) PDIP (P) 830 830 mW
TO-99 (LMC) 550 mW
SOIC (D) 530 530 mW
DSBGA (YPB) 435 mW
Output Short-Circuit to V+ 15 V and TA = 25C Continuous Continuou
GND (One s
Amplifier) (5)
Input Current (VIN < 0.3V) (6) 50 50 mA
Temperature 55 125 C
PDIP Package (P): Soldering (10 seconds) 260 260 C
SOIC Package (D) Vapor Phase (60 215 215 C
seconds)
Infrared (15 seconds) 220 220 C
Lead Temperature PDIP (P): (Soldering, 10 seconds) 260 260 C
TO-99 (LMC): (Soldering, 10 seconds) 300 300 C
Storage temperature, Tstg 65 150 65 150 C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate
conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the
test conditions, see the Electrical Characteristics.
(2) Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(4) For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a 125C maximum junction temperature
and a thermal resistance of 120C/W for PDIP, 182C/W for TO-99, 189C/W for SOIC package, and 230C/W for DSBGA, which
applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can be
derated based on a +150C maximum junction temperature. The dissipation is the total of both amplifiersuse external resistors, where
possible, to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.
(5) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15
V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result
from simultaneous shorts on all amplifiers.
(6) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of
the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is
also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to
the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and
normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than 0.3 V (at 25C).
6.2 ESD Ratings

VALUE UNIT
(1)
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 250 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

LM158-N, LM258-N, LM2904-N, LM358-N
6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage (V+ - V-):LM158. LM258, LM358 3 (1.5) 32 (16) V
Supply Voltage (V+ - V-):LM2904 3 (1.5) 26 (13) V
Operating Temperature: LM158 -55 125 C
Operating Temperature: LM358 0 70 C
6.4 Thermal Information

LM158-N, LM158-N LM2904-N, LM358-N
LM258-N,
LM358-N
THERMAL METRIC (1) UNIT
LMC NAB YPB D P
8 PINS
RJA Junction-to-ambient thermal resistance 155 132 230 189 120 C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics: LM158A, LM358A, LM158, LM258

V+ = +5.0 V, See (1), unless otherwise stated
LM158A LM358A LM158, LM258
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Input Offset Voltage See (2), TA = 25C 1 2 2 3 2 5 mV
Input Bias Current IIN(+) or IIN(), TA = 25C, 20 50 45 100 45 150 nA
VCM = 0 V, (3)
Input Offset Current IIN(+) IIN(), VCM = 0V, TA = 2 10 5 30 3 30
nA
25C
+ (4)
Input Common-Mode V = 30 V,
V+1.
Voltage Range (LM2904, V+ = 26V), TA = 0 0 V+1.5 0 V+1.5 V
5
25C
Supply Current Over Full Temperature
Range
RL = on All Op Amps
V+ = 30V (LM2904 V+ = 26V) 1 2 1 2 1 2 mA
V+ = 5V 0.5 1.2 0.5 1.2 0.5 1.2 mA
+
Large Signal Voltage Gain V = 15 V, TA = 25C,
RL 2 k, (For VO = 1 V to 50 100 25 100 50 100 V/mV
11 V)
Common-Mode TA = 25C,
70 85 65 85 70 85 dB
Rejection Ratio VCM = 0 V to V+1.5 V
Power Supply V+ = 5 V to 30 V
Rejection Ratio (LM2904, V+ = 5 V to 26 V), 65 100 65 100 65 100 dB
TA = 25C
(1) These specifications are limited to 55C TA +125C for the LM158/LM158A. With the LM258/LM258A, all temperature specifications
are limited to 25C TA 85C, the LM358/LM358A temperature specifications are limited to 0C TA 70C, and the LM2904
specifications are limited to 40C TA 85C.
(2) VO 1.4 V, RS = 0 with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ 1.5 V) at 25C. For LM2904, V+
from 5 V to 26 V.
(3) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
(4) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25C). The
upper end of the common-mode voltage range is V+ 1.5 V (at 25C), but either or both inputs can go to 32 V without damage (26 V for
LM2904), independent of the magnitude of V+.
LM158-N, LM258-N, LM2904-N, LM358-N
Electrical Characteristics: LM158A, LM358A, LM158, LM258 (continued)

V+ = +5.0 V, See(1), unless otherwise stated
LM158A LM358A LM158, LM258
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Power Supply V+ = 5 V to 30 V
Rejection Ratio (LM2904, V+ = 5 V to 26 V), 65 100 65 100 65 100 dB
TA = 25C
Amplifier-to-Amplifier f = 1 kHz to 20 kHz, TA =
120 120 120 dB
Coupling 25C (Input Referred), See (5)
Output Current Source VIN+ = 1 V,
VIN = 0 V,
20 40 20 40 20 40 mA
V+ = 15 V,
VO = 2 V, TA = 25C
Sink VIN = 1 V, VIN+ = 0 V
V+ = 15 V, TA = 25C, 10 20 10 20 10 20 mA
VO = 2 V
VIN = 1 V,
VIN+ = 0 V
12 50 12 50 12 50 A
TA = 25C, VO = 200 mV,
V+ = 15 V
Short Circuit to Ground TA = 25C, See (6), V+ = 15 V 40 60 40 60 40 60 mA
Input Offset Voltage See (2) 4 5 7 mV
Input Offset Voltage Drift RS = 0 7 15 7 20 7 V/C
Input Offset Current IIN(+) IIN() 30 75 100 nA
Input Offset Current Drift RS = 0 10 200 10 300 10 pA/C
Input Bias Current IIN(+) or IIN() 40 100 40 200 40 300 nA
Input Common-Mode V+ = 30 V, See (4) (LM2904,
0 V+2 0 V+2 0 V+2 V
Voltage Range V+ = 26 V)
+
Large Signal Voltage Gain V = +15 V
(VO = 1 V to 11 V) 25 15 25 V/mV
RL 2 k
Output VOH V+ = +30 V RL = 2 26 26 26 V
k
Voltage RL = 27 28 27 28 27 28 V
(LM2904, V+ = 26 V)
10 k
Swing VOL V+ = 5V, RL = 10 k 5 20 5 20 5 20 mV
Output Current Source VIN+ = +1 V, VIN = 0 V,
10 20 10 20 10 20 mA
V+ = 15 V, VO = 2 V
Sink VIN = +1 V, VIN+ = 0 V,
10 15 5 8 5 8 mA
V+ = 15 V, VO = 2 V
(5) Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This
typically can be detected as this type of capacitance increases at higher frequencies.

LM158-N, LM258-N, LM2904-N, LM358-N
6.6 Electrical Characteristics: LM358, LM2904

V+ = +5.0 V, See (1), unless otherwise stated
LM358 LM2904
MIN TYP MAX MIN TYP MAX
Input Offset Voltage See (2) , TA = 25C 2 7 2 7 mV
Input Bias Current IIN(+) or IIN(), TA = 25C,
45 250 45 250 nA
VCM = 0 V, See (3)
Input Offset Current IIN(+) IIN(), VCM = 0 V, TA = 25C 5 50 5 50 nA
Input Common-Mode V+ = 30 V, See (4) V+1. +
0 0 V 1.5 V
Voltage Range (LM2904, V+ = 26 V), TA = 25C 5
Supply Current Over Full Temperature Range
RL = on All Op Amps
V+ = 30 V (LM2904 V+ = 26 V) 1 2 1 2 mA
V+ = 5 V 0.5 1.2 0.5 1.2 mA
+
Large Signal Voltage V = 15V, TA = 25C,
Gain RL 2 k, (For VO = 1 V to 11 V) 25 100 25 100 V/mV
Common-Mode TA = 25C,
Rejection Ratio 65 85 50 70 dB
VCM = 0 V to V+1.5 V
Power Supply V+ = 5 V to 30 V 65 100 50 100 dB
Rejection Ratio
(LM2904, V+ = 5 V to 26 V), TA = 25C
Amplifier-to-Amplifier Coupling f = 1 kHz to 20 kHz, TA = 25C
120 120 dB
(Input Referred), See (5)
Output Current Source VIN+ = 1 V,
VIN = 0 V,
+
20 40 20 40 mA
V = 15 V,
VO = 2 V, TA = 25C
Sink VIN = 1 V, VIN+ = 0 V
V+ = 15V, TA = 25C, 10 20 10 20 mA
VO = 2 V
VIN = 1 V,
VIN+ = 0 V
12 50 12 50 A
TA = 25C, VO = 200 mV,
V+ = 15 V
Short Circuit to Ground TA = 25C, See (6), V+ = 15 V 40 60 40 60 mA
(2)
Input Offset Voltage See 9 10 mV
Input Offset Voltage Drift RS = 0 7 7 V/C
Input Offset Current IIN(+) IIN() 150 45 200 nA
Input Offset Current Drift RS = 0 10 10 pA/C
Input Bias Current IIN(+) or IIN() 40 500 40 500 nA
(1) These specifications are limited to 55C TA +125C for the LM158/LM158A. With the LM258/LM258A, all temperature specifications
are limited to 25C TA 85C, the LM358/LM358A temperature specifications are limited to 0C TA 70C, and the LM2904
specifications are limited to 40C TA 85C.
(2) VO 1.4 V, RS = 0 with V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ 1.5 V) at 25C. For LM2904, V+
from 5 V to 26 V.
(3) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
(4) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25C). The
upper end of the common-mode voltage range is V+ 1.5 V (at 25C), but either or both inputs can go to 32 V without damage (26 V for
LM2904), independent of the magnitude of V+.
(5) Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This
typically can be detected as this type of capacitance increases at higher frequencies.
LM158-N, LM258-N, LM2904-N, LM358-N
Electrical Characteristics: LM358, LM2904 (continued)

V+ = +5.0 V, See(1), unless otherwise stated
LM358 LM2904
MIN TYP MAX MIN TYP MAX
Input Common-Mode V+ = 30 V, See (4) (LM2904, V+ = 26 V)
0 V+2 0 V+ 2 V
Voltage Range
Large Signal Voltage Gain V+ = +15 V
(VO = 1 V to 11 V) 15 15 V/mV
RL 2 k
Output VOH V+ = 30 V RL = 2 k 26 22 V
+
Voltage (LM2904, V = 26 V) RL = 10 k 27 28 23 24 V
Swing VOL V+ = 5 V, RL = 10 k 5 20 5 100 mV
Output Current Source VIN+ = 1 V, VIN = 0 V,
10 20 10 20 mA
V+ = 15 V, VO = 2 V
Sink VIN = 1 V, VIN+ = 0 V,
5 8 5 8 mA
V+ = 15 V, VO = 2 V

LM158-N, LM258-N, LM2904-N, LM358-N
6.7 Typical Characteristics
Figure 1. Input Voltage Range Figure 2. Input Current
Figure 3. Supply Current Figure 4. Voltage Gain
Figure 5. Open Loop Frequency Response Figure 6. Common-Mode Rejection Ratio

LM158-N, LM258-N, LM2904-N, LM358-N
Typical Characteristics (continued)
Figure 7. Voltage Follower Pulse Response Figure 8. Voltage Follower Pulse Response (Small Signal)
Figure 9. Large Signal Frequency Response Figure 10. Output Characteristics Current Sourcing
Figure 11. Output Characteristics Current Sinking Figure 12. Current Limiting

LM158-N, LM258-N, LM2904-N, LM358-N
Typical Characteristics (continued)
Figure 13. Input Current (LM2902 Only) Figure 14. Voltage Gain (LM2902 Only)

LM158-N, LM258-N, LM2904-N, LM358-N
7 Detailed Description
7.1 Overview
The LM158 series are operational amplifiers which can operate with only a single power supply voltage, have
true-differential inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. These
amplifiers operate over a wide range of power supply voltage with little change in performance characteristics. At
25C amplifier operation is possible down to a minimum supply voltage of 2.3 VDC.
Large differential input voltages can be easily accommodated and, as input differential voltage protection diodes
are not needed, no large input currents result from large differential input voltages. The differential input voltage
may be larger than V+ without damaging the device. Protection should be provided to prevent the input voltages
from going negative more than 0.3 VDC (at 25C). An input clamp diode with a resistor to the IC input terminal
can be used.
7.2 Functional Block Diagram
Figure 15. (Each Amplifier)
7.3 Feature Description

The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (IN). The amplifer
amplifies only the difference in voltage between the two inpus, which is called the differential input voltage. The
output voltage of the op-amp Vout is given by Equation 1:
VOUT = AOL (IN+ - IN-)
where
AOL is the open-loop gain of the amplifier, typically around 100dB (100,000x, or 10uV per Volt). (1)
To reduce the power supply current drain, the amplifiers have a class A output stage for small signal levels which
converts to class B in a large signal mode. This allows the amplifiers to both source and sink large output
currents. Therefore both NPN and PNP external current boost transistors can be used to extend the power
capability of the basic amplifiers. The output voltage needs to raise approximately 1 diode drop above ground to
bias the on-chip vertical PNP transistor for output current sinking applications.
For ac applications, where the load is capacitively coupled to the output of the amplifier, a resistor should be
used, from the output of the amplifier to ground to increase the class A bias current and prevent crossover
distortion. Where the load is directly coupled, as in dc applications, there is no crossover distortion.
Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin. Values
of 50 pF can be accommodated using the worst-case non-inverting unity gain connection. Large closed loop
gains or resistive isolation should be used if larger load capacitance must be driven by the amplifier.
The bias network of the LM158 establishes a drain current which is independent of the magnitude of the power
supply voltage over the range of 3 VDC to 30 VDC.
Output short circuits either to ground or to the positive power supply should be of short time duration. Units can
be destroyed, not as a result of the short circuit current causing metal fusing, but rather due to the large increase
in IC chip power dissipation which will cause eventual failure due to excessive junction temperatures. Putting
direct short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive
levels, if not properly protected with external dissipation limiting resistors in series with the output leads of the
amplifiers. The larger value of output source current which is available at 25C provides a larger output current
capability at elevated temperatures (see Typical Characteristics) than a standard IC op amp.

LM158-N, LM258-N, LM2904-N, LM358-N
7.4 Device Functional Modes
Figure 16. Schematic Diagram
The circuits presented in the Typical Single-Supply Applications emphasize operation on only a single power
supply voltage. If complementary power supplies are available, all of the standard op-amp circuits can be used.
In general, introducing a pseudo-ground (a bias voltage reference of V+/2) will allow operation above and below
this value in single power supply systems. Many application circuits are shown which take advantage of the wide
input common-mode voltage range which includes ground. In most cases, input biasing is not required and input
voltages which range to ground can easily be accommodated.

LM158-N, LM258-N, LM2904-N, LM358-N
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TIs customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information

The LM158 family bring performance, economy, and ease-of-use to a wide variety of op-amp applications.
8.2 Typical Applications

8.2.1 Noninverting DC Gain
Figure 17 shows a high input impedance non-inverting circuit. This circuit gives a closed-loop gain equal to the
ratio of the sum of R1 and R2 to R1 and a closed-loop 3 dB bandwidth equal to the amplifier unity-gain frequency
divided by the closed-loop gain. This design has the benefit of a very high input impedance, which is equal to the
differential input impedance multiplied by loop gain. (Open loop gain/Closed loop gain.) In DC coupled
applications, input impedance is not as important as input current and its voltage drop across the source
resistance. Note that the amplifier output will go into saturation if the input is allowed to float. This may be
important if the amplifier must be switched from source to source.
*R not needed due to temperature independent IIN
Figure 17. Non-Inverting DC Gain (0-V Output)
8.2.1.1 Design Requirements

For this example application, the supply voltage is +5V, and 100x5% of noninverting gain is necessary. Signal
input impedance is approx 10k.
8.2.1.2 Detailed Design Procedure

Using the equation for a non-inverting amplifier configuration ; G = 1+ R2/R1, set R1 to 10k, and R2 to 99x the
value of R1, which would be 990k. Replacing the 990k with a 1M will result in a gain of 101, which is within
the desired gain tolerance.
The gain-frequency characteristic of the amplifier and its feedback network must be such that oscillation does not
occur. To meet this condition, the phase shift through amplifier and feedback network must never exceed 180
for any frequency where the gain of the amplifier and its feedback network is greater than unity. In practical
applications, the phase shift should not approach 180 since this is the situation of conditional stability. Obviously
the most critical case occurs when the attenuation of the feedback network is zero.

LM158-N, LM258-N, LM2904-N, LM358-N
Typical Applications (continued)

8.2.1.3 Application Curve
Figure 18. Transfer Curve for Non-Inverting Configuration
8.2.2 System Examples
8.2.2.1 Typical Single-Supply Applications

(V+ = 5.0 VDC)
Where: VO = V1 + V2 V3 V4 VO = 0 VDC for VIN = 0 VDC

(V1 + V2) (V3 + V4) to keep VO > 0 VDC AV = 10
Figure 19. DC Summing Amplifier Figure 20. Power Amplifier

(VIN'S 0 VDC and VO 0 VDC)

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
fo = 1 kHz
Q = 50
Av = 100 (40 dB)
Figure 21. BI-QUAD RC Active Bandpass Filter Figure 22. Lamp Driver
Figure 23. LED Driver Figure 24. Driving TTL

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
VO = VIN
Figure 25. Voltage Follower Figure 26. Pulse Generator
Figure 27. Squarewave Oscillator Figure 28. Pulse Generator

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
HIGH ZIN
LOW ZOUT IO = 1 amp/volt VIN
(Increase RE for IO small)
Figure 29. Low Drift Peak Detector Figure 30. High Compliance Current Sink
*WIDE CONTROL VOLTAGE RANGE: 0 VDC VC

2 (V+ 1.5V DC)
Figure 31. Comparator with Hysteresis Figure 32. Voltage Controlled Oscillator (VCO)

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
fo = 1 kHz
Q=1
AV = 2
Figure 33. Ground Referencing a Differential Input Figure 34. DC Coupled Low-Pass RC Active Filter
Signal
fo = 1 kHz
Q = 25
Figure 35. Bandpass Active Filter Figure 36. Photo Voltaic-Cell Amplifier

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
Figure 37. Using Symmetrical Amplifiers to Reduce Input Current (General Concept)
Figure 38. Fixed Current Sources

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
*(Increase R1 for IL small)

VL V+ 2V
Figure 39. Current Monitor
Figure 40. AC Coupled Inverting Amplifier

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
Av = 11 (As Shown)
Figure 41. AC Coupled Non-Inverting Amplifier
Figure 42. High Input Z, DC Differential Amplifier
Figure 43. Bridge Current Amplifier

LM158-N, LM258-N, LM2904-N, LM358-N

(V+ = 5.0 VDC)
Figure 44. High Input Z Adjustable-Gain DC Instrumentation Amplifier

LM158-N, LM258-N, LM2904-N, LM358-N
9 Power Supply Recommendations

For proper operation, the power supplies must be properly decoupled. For decoupling the supply pins it is
suggested that 10 nF capacitors be placed as close as possible to the op-amp power supply pins. For single
supply, place a capacitor between V+ and Vsupply leads. For dual supplies, place one capacitor between
V+ and ground, and one capacitor between V- and ground.
Precautions should be taken to insure that the power supply for the integrated circuit never becomes
reversed in polarity or that the unit is not inadvertently installed backwards in a test socket as an unlimited
current surge through the resulting forward diode within the IC could cause fusing of the internal conductors
and result in a destroyed unit.
10 Layout
10.1 Layout Guidelines

For single-ended supply configurations, the V+ pin should be bypassed to ground with a low ESR capacitor. The
optimum placement is closest to the V+ pin. Care should be taken to minimize the loop area formed by the
bypass capacitor connection between V+ and ground. The ground pin should be connected to the PCB ground
plane at the pin of the device. The feedback components should be placed as close to the device as possible to
minimize stray parasitics.
For dual supply configurations, both the V+ pin and V- pin should be bypassed to ground with a low ESR
capacitor. The optimum placement is closest to the corresponding supply pin. Care should be taken to minimize
the loop area formed by the bypass capacitor connection between V+ or V- and ground. The feedback
components should be placed as close to the device as possible to minimize stray parasitics.
For both configurations, as ground plane underneath the device is recommended.
10.2 Layout Example
Figure 45. Layout Example

LM158-N, LM258-N, LM2904-N, LM358-N
11 Device and Documentation Support
11.1 Related Links

The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links

TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY
DOCUMENTS SOFTWARE COMMUNITY
LM158-N Click here Click here Click here Click here Click here
11.2 Trademarks
All trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM
www.ti.com 21-Nov-2017
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
LM158AH ACTIVE TO-99 LMC 8 500 TBD Call TI Call TI -55 to 125 ( LM158AH, LM158AH
)
LM158AH/NOPB ACTIVE TO-99 LMC 8 500 Green (RoHS Call TI Level-1-NA-UNLIM -55 to 125 ( LM158AH, LM158AH
& no Sb/Br) )
LM158H ACTIVE TO-99 LMC 8 500 TBD Call TI Call TI -55 to 125 ( LM158H, LM158H)
LM158H/NOPB ACTIVE TO-99 LMC 8 500 Green (RoHS Call TI Level-1-NA-UNLIM -55 to 125 ( LM158H, LM158H)
& no Sb/Br)
LM158J ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LM158J
LM258H ACTIVE TO-99 LMC 8 500 TBD Call TI Call TI -25 to 85 ( LM258H, LM258H)
LM258H/NOPB ACTIVE TO-99 LMC 8 500 Green (RoHS Call TI Level-1-NA-UNLIM -25 to 85 ( LM258H, LM258H)
& no Sb/Br)
LM2904ITP/NOPB ACTIVE DSBGA YPB 8 250 Green (RoHS SNAGCU Level-1-260C-UNLIM -40 to 85 A
& no Sb/Br) 09
LM2904ITPX/NOPB ACTIVE DSBGA YPB 8 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM -40 to 85 A
& no Sb/Br) 09
LM2904M LIFEBUY SOIC D 8 95 TBD Call TI Call TI -40 to 85 LM
2904M
LM2904M/NOPB ACTIVE SOIC D 8 95 Green (RoHS CU SN Level-1-260C-UNLIM -40 to 85 LM
& no Sb/Br) 2904M
LM2904MX NRND SOIC D 8 2500 TBD Call TI Call TI -40 to 85 LM
2904M
LM2904MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS CU SN Level-1-260C-UNLIM -40 to 85 LM
& no Sb/Br) 2904M
LM2904N/NOPB ACTIVE PDIP P 8 40 Green (RoHS CU SN Level-1-NA-UNLIM -40 to 85 LM
& no Sb/Br) 2904N
LM358AM NRND SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM
358AM
LM358AM/NOPB ACTIVE SOIC D 8 95 Green (RoHS CU SN Level-1-260C-UNLIM 0 to 70 LM
& no Sb/Br) 358AM
LM358AMX NRND SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM
358AM
Addendum-Page 1
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
LM358AMX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS CU SN Level-1-260C-UNLIM 0 to 70 LM

& no Sb/Br) 358AM
LM358AN/NOPB ACTIVE PDIP P 8 40 Green (RoHS CU SN Level-1-NA-UNLIM 0 to 70 LM
& no Sb/Br) 358AN
LM358H/NOPB ACTIVE TO-99 LMC 8 500 Green (RoHS Call TI Level-1-NA-UNLIM 0 to 70 ( LM358H, LM358H)
& no Sb/Br)
LM358M NRND SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM
358M
LM358M/NOPB ACTIVE SOIC D 8 95 Green (RoHS CU SN Level-1-260C-UNLIM 0 to 70 LM
& no Sb/Br) 358M
LM358MX NRND SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM
358M
LM358MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS CU SN Level-1-260C-UNLIM 0 to 70 LM
& no Sb/Br) 358M
LM358N/NOPB ACTIVE PDIP P 8 40 Green (RoHS CU SN Level-1-NA-UNLIM 0 to 70 LM
& no Sb/Br) 358N
LM358TP/NOPB ACTIVE DSBGA YPB 8 250 Green (RoHS SNAGCU Level-1-260C-UNLIM 0 to 70 A
& no Sb/Br) 07
LM358TPX/NOPB ACTIVE DSBGA YPB 8 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM 0 to 70 A
& no Sb/Br) 07
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 2
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM2904-N :
Automotive: LM2904-Q1
Enhanced Product: LM2904-EP
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Enhanced Product - Supports Defense, Aerospace and Medical Applications
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com 7-Oct-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM2904ITP/NOPB DSBGA YPB 8 250 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1
LM2904ITPX/NOPB DSBGA YPB 8 3000 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1
LM2904MX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM2904MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358AMX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358AMX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358MX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LM358TP/NOPB DSBGA YPB 8 250 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1
LM358TPX/NOPB DSBGA YPB 8 3000 178.0 8.4 1.5 1.5 0.66 4.0 8.0 Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 7-Oct-2014
*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM2904ITP/NOPB DSBGA YPB 8 250 210.0 185.0 35.0
LM2904ITPX/NOPB DSBGA YPB 8 3000 210.0 185.0 35.0
LM2904MX SOIC D 8 2500 367.0 367.0 35.0
LM2904MX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM358AMX SOIC D 8 2500 367.0 367.0 35.0
LM358AMX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM358MX SOIC D 8 2500 367.0 367.0 35.0
LM358MX/NOPB SOIC D 8 2500 367.0 367.0 35.0
LM358TP/NOPB DSBGA YPB 8 250 210.0 185.0 35.0
LM358TPX/NOPB DSBGA YPB 8 3000 210.0 185.0 35.0
Pack Materials-Page 2
MECHANICAL DATA
NAB0008A
J08A (Rev M)
www.ti.com
PACKAGE OUTLINE
YPB0008 SCALE 9.000
DSBGA - 0.575 mm max height
DIE SIZE BALL GRID ARRAY
B E A
BALL A1
CORNER
0.575 MAX C
SEATING PLANE
0.15 BALL TYP
0.11 0.05 C
1
TYP
1
TYP SYMM
B
D: Max = 1.337 mm, Min =1.276 mm
0.5
TYP E: Max = 1.337 mm, Min =1.276 mm
A
0.18 1 2 3
8X
0.16
0.015 C A B
0.5
TYP
SYMM
4215100/B 07/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
YPB0008 DSBGA - 0.575 mm max height
(0.5)
TYP
8X ( 0.16)
1 2 3
(0.5) TYP
SYMM
B
SYMM
LAND PATTERN EXAMPLE

SCALE:40X
( 0.16) 0.05 MAX METAL UNDER

METAL 0.05 MIN
SOLDER MASK
SOLDER MASK ( 0.16)

OPENING SOLDER MASK
OPENING
NON-SOLDER MASK
DEFINED SOLDER MASK
(PREFERRED) DEFINED
SOLDER MASK DETAILS

NOT TO SCALE
4215100/B 07/2016
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YPB0008 DSBGA - 0.575 mm max height
(0.5) TYP
(R0.05) TYP
8X ( 0.3)
1 2 3
(0.5) TYP
SYMM
B
METAL
TYP
SYMM
SOLDER PASTE EXAMPLE

BASED ON 0.125mm THICK STENCIL
SCALE:50X
4215100/B 07/2016
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
IMPORTANT NOTICE
Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its
semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers
should obtain the latest relevant information before placing orders and should verify that such information is current and complete.
TIs published terms of sale for semiconductor products (http://www.ti.com/sc/docs/stdterms.htm) apply to the sale of packaged integrated
circuit products that TI has qualified and released to market. Additional terms may apply to the use or sale of other types of TI products and
services.
Reproduction of significant portions of TI information in TI data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such reproduced
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different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the
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Buyers and others who are developing systems that incorporate TI products (collectively, Designers) understand and agree that Designers
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LM158-N, LM258-N, LM2904-N, LM358-N

LMx58-N Low-Power, Dual-Operational Amplifiers

Changes from Revision H (March 2013) to Revision I Page

Changes from Revision G (March 2013) to Revision H Page

Changed layout of National Data Sheet to TI format ........................................................................................................... 25

2 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

5 Pin Configuration and Functions

D, P, and NAB Package

Copyright 20002014, Texas Instruments Incorporated Submit Documentation Feedback 3

6.2 ESD Ratings

4 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

6.3 Recommended Operating Conditions

6.4 Thermal Information

6.5 Electrical Characteristics: LM158A, LM358A, LM158, LM258

Electrical Characteristics: LM158A, LM358A, LM158, LM258 (continued)

6 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

6.6 Electrical Characteristics: LM358, LM2904

Electrical Characteristics: LM358, LM2904 (continued)

8 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

6.7 Typical Characteristics

Figure 1. Input Voltage Range Figure 2. Input Current

Figure 3. Supply Current Figure 4. Voltage Gain

Figure 5. Open Loop Frequency Response Figure 6. Common-Mode Rejection Ratio

Copyright 20002014, Texas Instruments Incorporated Submit Documentation Feedback 9

Typical Characteristics (continued)

10 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

Typical Characteristics (continued)

Copyright 20002014, Texas Instruments Incorporated Submit Documentation Feedback 11

7.2 Functional Block Diagram

Figure 15. (Each Amplifier)

7.3 Feature Description

12 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

7.4 Device Functional Modes

Figure 16. Schematic Diagram

Copyright 20002014, Texas Instruments Incorporated Submit Documentation Feedback 13

8 Application and Implementation

8.1 Application Information

8.2 Typical Applications

*R not needed due to temperature independent IIN

Figure 17. Non-Inverting DC Gain (0-V Output)

8.2.1.1 Design Requirements

8.2.1.2 Detailed Design Procedure

14 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

Typical Applications (continued)

Figure 18. Transfer Curve for Non-Inverting Configuration

8.2.2 System Examples

8.2.2.1 Typical Single-Supply Applications

Where: VO = V1 + V2 V3 V4 VO = 0 VDC for VIN = 0 VDC

Figure 19. DC Summing Amplifier Figure 20. Power Amplifier

Copyright 20002014, Texas Instruments Incorporated Submit Documentation Feedback 15

Typical Applications (continued)

Figure 23. LED Driver Figure 24. Driving TTL

16 Submit Documentation Feedback Copyright 20002014, Texas Instruments Incorporated

Product Folder Links: LM158-N LM258-N LM2904-N LM358-N

Typical Applications (continued)